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Structural features at the Si-SiO/sub 2/ interface

Conference ·
OSTI ID:5573186
Electron paramagnetic resonance studies of defects at the Si-SiO/sub 2/ interface are presented which deal with the hyperfine interactions, strain effects, and spin-spin interactions. Our hyperfine studies include studies of the /sup 17/O and /sup 29/Si hyperfine interactions associated with dangling bonds localized on Si atoms at the (001) and (111) Si-SiO/sub 2/ interfaces. These studies indicate that oxygen is not an immediate part of the defect structure. Strain is manifested in the EPR spectra by Zeeman and hyperfine broadening effects from which we deduce that the rms deviation in the vertical position of the defect Si atoms is approximately 0.02 A. A computational model for calculating the dipolar contribution to the linewidth due to unpaired spins at the interface is presented. The contribution to the total linewidth of the P/sub b/ Zeeman resonance, which is 2.1 G (fwhm), is calculated to be 0.35 G for the case in which the applied magnetic field is perpendicular to the (111) Si-SiO/sub 2/ interface.
Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5573186
Report Number(s):
SAND-86-0787C; CONF-860748-1; ON: DE86012947
Country of Publication:
United States
Language:
English