EPR linewidth studies of unpaired electrons at the Si-SiO/sub 2/ interface

Conference · Sun Jan 01 04:00:00 EST 1984

OSTI ID:6549926

Brower, K L

Electron paramagnetic resonance studies of the dangling bonds (P/sub b/ centers) at the (111) Si-SiO/sub 2/ interface are presented. In particular the angular variation in the P/sub b/ Zeeman resonance is dominated by Zeeman line broadening effects which could arise from strain within the silicon at the interface. The dipolar contribution to the observed linewidth is less than that expected assuming a random distribution of dangling bonds on an atomically flat (111) Si-SiO/sub 2/ interface. This observation tentatively suggests that the dangling bonds are distributed with enhanced separation. Such an effect might occur if the dangling bond formation results from the release of strain energy from a localized region at the interface. Pulsed ruby laser irradiation of the Si-SiO/sub 2/ interface at energies above the threshold for melting of the silicon increases the dangling-bond concentration by a factor of 10 and produces an angular variation in the observed linewidth which is consistent with planar dipolar broadening effects.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6549926
• Report Number(s): SAND-84-0823C; CONF-840878-2; ON: DE84016727
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
CHALCOGENIDES
CHEMICAL BONDS
ELECTROMAGNETIC RADIATION
ELECTRON SPIN RESONANCE
ELEMENTS
INTERFACES
LASER RADIATION
LINE WIDTHS
MAGNETIC RESONANCE
MELTING
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
RADIATIONS
RESONANCE
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
ZEEMAN EFFECT