Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO₂ Interface Defects.

Conference · Tue Sep 01 00:00:00 EDT 2020

DOI:https://doi.org/10.2172/1824259· OSTI ID:1824259

Moxim, Stephen J. ^[1]; Lenahan, Patrick M. ^[1]; Sharov, Fedor V. ^[1]; Haase, Gad S. ^[2]; Hughart, David Russell ^[2]

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1. Pennsylvania State Univ., University Park, PA (United States)
2. Sandia National Lab. (SNL-CA), Livermore, CA (United States)

It is widely accepted that the breakdown of Si0₂ gate dielectrics is caused by the buildup of stress-induced defects over time. Although several physical mechanisms have been proposed for the generation of these defects, very little direct experimental evidence as to the chemical and physical identity of these defects has been generated in the literature thus far. Here, we present electrically detected magnetic resonance (EDMR) measurements obtained via spin-dependent recombination currents at the interface of high-field stressed Si/Si0₂ metal-oxide-semiconductor field effect transistors (MOSFETs).

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: NA0003525
• OSTI ID: 1824259
• Report Number(s): SAND-2020-10529C; 691058
• Resource Relation: Conference: Proposed for presentation at the 2020 IEEE International Integrated Reliability Workshop (IIRW), Held Virtually (United States), 4-29 Oct 2020
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE