Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors

Moxim, Stephen J.; Sharov, Fedor V.; Hughart, David R.; Haase, Gaddi S.; McKay, Colin G.; Lenahan, Patrick M.

doi:10.1063/5.0077946

Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO₂ transistors

Journal Article · Mon Feb 07 00:00:00 EST 2022 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0077946· OSTI ID:1882880

^[1]; ^[1]; ^[2]; Haase, Gaddi S. ^[2]; ^[2]; ^[1]

Pennsylvania State Univ., University Park, PA (United States).
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

In this study, electrically detected magnetic resonance and near-zero-field magnetoresistance measurements were used to study atomic-scale traps generated during high-field gate stressing in Si/SiO₂ MOSFETs. The defects observed are almost certainly important to time-dependent dielectric breakdown. The measurements were made with spin-dependent recombination current involving defects at and near the Si/SiO₂ boundary. The interface traps observed are P_b0 and P_b1 centers, which are silicon dangling bond defects. The ratio of P_b0/P_b1 is dependent on the gate stressing polarity. Electrically detected magnetic resonance measurements also reveal generation of E' oxide defects near the Si/SiO₂ interface. Near-zero-field magnetoresistance measurements made throughout stressing reveal that the local hyperfine environment of the interface traps changes with stressing time; these changes are almost certainly due to the redistribution of hydrogen near the interface.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: Defense Threat Reduction Agency (DTRA); USDOE; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1882880

Alternate ID(s):: OSTI ID: 1844032

Report Number(s):: SAND2022-0978J; 703109

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 120; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors

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Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO₂ transistors