The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate
Chemical effects at the surface and interface can broaden core-level spectra in X-ray photoemission for thin-film heterojunctions, as can electronic charge redistributions. We explore these effects and their influence on the measurement of valence and conduction band offsets at the epitaxial SrTiO3(001)/p-Ge(001) heterojunction. Here, we observe a clear broadening in Ge 3d and Sr 3d core-level X-ray photoelectron spectra relative to those of clean, bulk Ge(001), and homoepitaxial SrTiO3(001), respectively. Angle-resolved measurements indicate that this broadening is driven primarily by chemical shifts associated with surface hydroxylation, with built-in potentials playing only a minor role. The impact of these two interpretations on the valence band offset is significant on the scale of transport energetics, amounting to a difference of 0.2 eV.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Biological and Environmental Research (BER) (SC-23)
- Grant/Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1454742
- Alternate ID(s):
- OSTI ID: 1348949
- Report Number(s):
- PNNL-SA--123225
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 110; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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