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The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4977422· OSTI ID:1454742
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  1. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate
Chemical effects at the surface and interface can broaden core-level spectra in X-ray photoemission for thin-film heterojunctions, as can electronic charge redistributions. We explore these effects and their influence on the measurement of valence and conduction band offsets at the epitaxial SrTiO3(001)/p-Ge(001) heterojunction. Here, we observe a clear broadening in Ge 3d and Sr 3d core-level X-ray photoelectron spectra relative to those of clean, bulk Ge(001), and homoepitaxial SrTiO3(001), respectively. Angle-resolved measurements indicate that this broadening is driven primarily by chemical shifts associated with surface hydroxylation, with built-in potentials playing only a minor role. The impact of these two interpretations on the valence band offset is significant on the scale of transport energetics, amounting to a difference of 0.2 eV.
Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Biological and Environmental Research (BER) (SC-23)
Grant/Contract Number:
AC05-76RL01830
OSTI ID:
1454742
Alternate ID(s):
OSTI ID: 1348949
Report Number(s):
PNNL-SA--123225
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 110; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Thermodynamic Oxidation and Reduction Potentials of Photocatalytic Semiconductors in Aqueous Solution journal September 2012
Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions journal September 2000
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Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy journal August 1983
Electronic structure of clean and hydrogen-chemisorbed Ge(001) surfaces studied by photoelectron spectroscopy journal June 1994
Band Alignment, Built-In Potential, and the Absence of Conductivity at the LaCrO 3 / SrTiO 3 ( 001 ) Heterojunction journal November 2011
Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials journal June 1980
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Cited By (13)

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices journal July 2019
Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions journal November 2019
Valence-band offsets of InGaZnO4, LaAlO3, and SrTiO3 heterostructures explained by interface-induced gap states journal October 2018
The elusive photocatalytic water splitting reaction using sunlight on suspended nanoparticles: is there a way forward? journal January 2020
Oxygen partial pressure dependence of surface space charge formation in donor-doped SrTiO 3 journal May 2017
Characterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy journal May 2018
Interfacial structure of SrZr x Ti 1− x O 3 films on Ge journal November 2018
Probing energy landscapes in multilayer heterostructures: Challenges and opportunities journal November 2019
Chemical control of the electrical surface properties in donor-doped transition metal oxides journal April 2019
Chemical and electronic structure analysis of a SrTiO3 (001)/p-Ge (001) hydrogen evolution photocathode journal March 2018
Oxygen partial pressure dependence of surface space charge formation in donor-doped SrTiO3 text January 2017
Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions text January 2019
Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge text January 2018

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