Band Offsets for the Epitaxial TiO₂/SrTiO₃/Si(001) System
We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO₂ (anatase)/ SrTiO₃/Si(001) system. The valence band offsets are -2.1 +/- 0.1 eV and +0.2 +/- 0.1 eV at the SrTiO₃/Si and TiO₂/SrTiO₃ heterojunctions, respectively. Assuming bulk band gaps for the SrTiO₃ and TiO₂ epitaxial films, the associated conduction band offsets are +0.1 +/- 0.1 eV and +0.1 +/- 0.1 eV. Si at the interface is in a flat-band state, indicating a very low density of electronic states. These results suggest that spin polarized electron injection from ferromagnetic Co-doped TiO₂ anatase into Si should be facile. PACS numbers: 79.60.Jv, 72.25.Dc
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 15006820
- Report Number(s):
- PNNL-SA-39168; 1771; 400403809
- Journal Information:
- Applied Physics Letters, 83(18):3734-3736, Journal Name: Applied Physics Letters, 83(18):3734-3736 Journal Issue: 18 Vol. 83; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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