Band discontinuities at epitaxial SrTiO{sub 3}/Si(001) heterojunctions

Journal Article · Mon Sep 11 00:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1310209· OSTI ID:20217580

Chambers, S A ^[1]; Liang, Y ^[1]; Yu, Z ^[2]; Droopad, R ^[2]; Ramdani, J ^[2]; Eisenbeiser, K ^[2]

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1. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
2. Physical Sciences Research Laboratories, Motorola Labs, Tempe, Arizona (United States)

We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO{sub 3}/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results. (c) 2000 American Institute of Physics.

• OSTI ID: 20217580
• Journal Information: Applied Physics Letters, Vol. 77, Issue 11; Other Information: PBD: 11 Sep 2000; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
STRONTIUM TITANATES
SILICON
INTERFACES
HETEROJUNCTIONS
ELECTRONIC STRUCTURE
MOLECULAR BEAM EPITAXY
PHOTOEMISSION
EXPERIMENTAL DATA