Band discontinuities at epitaxial SrTiO{sub 3}/Si(001) heterojunctions
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
- Physical Sciences Research Laboratories, Motorola Labs, Tempe, Arizona (United States)
We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO{sub 3}/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20217580
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 77; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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