Band Discontinuities at Epitaxial SrTiO3/Si(001)Heterojunctions

Journal Article · Wed Dec 01 04:00:00 EST 1999 · Applied Physics Letters

OSTI ID:15001375

Chambers, Scott A ^[1]; Liang, Yong ^[1]; Yu, Z ^[2]; Droopad, R ^[2]; Ramdani, J ^[2]; Eisenbeiser, K ^[2]

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1. BATTELLE (PACIFIC NW LAB)
2. Motorola

We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO3/Si(001) interfaces, as prepared by molecular beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results.

• Research Organization: Pacific Northwest National Lab., Richland, WA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC06-76RL01830
• OSTI ID: 15001375
• Report Number(s): PNNL-SA-33474; KJ0200000
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 77
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BENDING
DATA
HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
N-
P-SI
PHOTOEMISSION
SRTIO3/SI(001)
VALENCE