Band Offsets at the Epitaxial Anatase TiO2/n-SrTiO3(001) Interface
Journal Article
·
· Surface Science, 603(5):771-780
We have used high-energy-resolution x-ray photoelectron spectroscopy to measure valence band offsets at the epitaxial anatase TiO2(002)/n-SrTiO3(001) heterojunction prepared by molecular beam epitaxy, Within experimental error, the valance band offset is zero for anatase thicknesses between 1 and 7 monolayers. The conduction band offset is also zero by virtue of the fact that both anatase and SrTiO3 exhibit the same bandgap value (~3.2 eV). In one set of experiments, the interface included a partial monolayer of fluorine remaining from the HF etch that was used to prepare the substrate. The F could not be removed without Ar ion sputtering and annealing, which in turn resulted in ~0.15 eV of band bending, indicating the presence of interfacial defects. The band offsets were measured to be approximately 0 eV as well when the F was removed. Density functional theory predicts the valence band offset for the clean interface to be 0.5 eV. Inclusion of interfacial F reduces the theoretical band offset to 0.2 eV, much closer to experiment, and suggesting that the interface dipoles created by F and sputter defects have a major effect on the band offset.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 951816
- Report Number(s):
- PNNL-SA-62398; 19392; KC0302010
- Journal Information:
- Surface Science, 603(5):771-780, Journal Name: Surface Science, 603(5):771-780 Journal Issue: 5 Vol. 603; ISSN SUSCAS; ISSN 0039-6028
- Country of Publication:
- United States
- Language:
- English
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