Band Alignment at Epitaxial SrTiO3-GaAs(001) Heterojunction
Band discontinuities and band bending at the epitaxial SrTiO{sub 3}/GaAs(001) interface were investigated using x-ray and ultraviolet photoelectron spectroscopy. Results showed that the epitaxial SrTiO{sub 3}/GaAs(001) formed a type-II heterojunction and valence band offsets being 0.6 eV and 2.5 eV, respectively, for both n- and p-GaAs(001) substrates. The photoemission results further revealed that Fermi level was unpinned at the epitaxial SrTiO{sub 3}/GaAs(001) interface.
- Research Organization:
- Pacific Northwest National Lab., Richland, WA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 15016316
- Report Number(s):
- PNNL-SA-44078; APPLAB; KP1301030; TRN: US200513%%36
- Journal Information:
- Applied Physics Letters, Vol. 86, Issue 8; Other Information: Article no: 082905; PBD: 21 Feb 2005; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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