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Title: The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction

Abstract

Chemical effects at the surface and interface can broaden core-level spectra in X-ray photoemission for thin-film heterojunctions, as can electronic charge redistributions. We explore these effects and their influence on the measurement of valence and conduction band offsets at the epitaxial SrTiO3(001)/p-Ge(001) heterojunction. Here, we observe a clear broadening in Ge 3d and Sr 3d core-level X-ray photoelectron spectra relative to those of clean, bulk Ge(001), and homoepitaxial SrTiO3(001), respectively. Angle-resolved measurements indicate that this broadening is driven primarily by chemical shifts associated with surface hydroxylation, with built-in potentials playing only a minor role. The impact of these two interpretations on the valence band offset is significant on the scale of transport energetics, amounting to a difference of 0.2 eV.

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [1]
  1. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Biological and Environmental Research (BER)
OSTI Identifier:
1454742
Alternate Identifier(s):
OSTI ID: 1348949
Report Number(s):
PNNL-SA-123225
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
10122; AC05-76RL01830
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Chambers, Scott A., Du, Yingge, Comes, Ryan B., Spurgeon, Steven R., and Sushko, Peter V. The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction. United States: N. p., 2017. Web. doi:10.1063/1.4977422.
Chambers, Scott A., Du, Yingge, Comes, Ryan B., Spurgeon, Steven R., & Sushko, Peter V. The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction. United States. https://doi.org/10.1063/1.4977422
Chambers, Scott A., Du, Yingge, Comes, Ryan B., Spurgeon, Steven R., and Sushko, Peter V. 2017. "The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction". United States. https://doi.org/10.1063/1.4977422. https://www.osti.gov/servlets/purl/1454742.
@article{osti_1454742,
title = {The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction},
author = {Chambers, Scott A. and Du, Yingge and Comes, Ryan B. and Spurgeon, Steven R. and Sushko, Peter V.},
abstractNote = {Chemical effects at the surface and interface can broaden core-level spectra in X-ray photoemission for thin-film heterojunctions, as can electronic charge redistributions. We explore these effects and their influence on the measurement of valence and conduction band offsets at the epitaxial SrTiO3(001)/p-Ge(001) heterojunction. Here, we observe a clear broadening in Ge 3d and Sr 3d core-level X-ray photoelectron spectra relative to those of clean, bulk Ge(001), and homoepitaxial SrTiO3(001), respectively. Angle-resolved measurements indicate that this broadening is driven primarily by chemical shifts associated with surface hydroxylation, with built-in potentials playing only a minor role. The impact of these two interpretations on the valence band offset is significant on the scale of transport energetics, amounting to a difference of 0.2 eV.},
doi = {10.1063/1.4977422},
url = {https://www.osti.gov/biblio/1454742}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 110,
place = {United States},
year = {Mon Feb 20 00:00:00 EST 2017},
month = {Mon Feb 20 00:00:00 EST 2017}
}

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Cited by: 21 works
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Works referenced in this record:

Integration of SrTiO 3 on Crystallographically Oriented Epitaxial Germanium for Low-Power Device Applications
journal, February 2015


A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors
journal, May 2014


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Band Alignment, Built-In Potential, and the Absence of Conductivity at the LaCrO 3 / SrTiO 3 ( 001 ) Heterojunction
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journal, September 2000


Works referencing / citing this record:

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
journal, July 2019


Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions
journal, November 2019


Valence-band offsets of InGaZnO4, LaAlO3, and SrTiO3 heterostructures explained by interface-induced gap states
journal, October 2018


Oxygen partial pressure dependence of surface space charge formation in donor-doped SrTiO 3
journal, May 2017


Interfacial structure of SrZr x Ti 1− x O 3 films on Ge
journal, November 2018


Probing energy landscapes in multilayer heterostructures: Challenges and opportunities
journal, November 2019


Chemical control of the electrical surface properties in donor-doped transition metal oxides
journal, April 2019


Chemical and electronic structure analysis of a SrTiO3 (001)/p-Ge (001) hydrogen evolution photocathode
journal, March 2018


Oxygen partial pressure dependence of surface space charge formation in donor-doped SrTiO3
text, January 2017


Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions
text, January 2019


Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge
text, January 2018