Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations

Bielejec, Edward S.; Pacheco, Jose L.; Perry, Daniel Lee; Marinella, Matthew; Hughart, David Russell

doi:10.1007/s00339-018-2041-3

Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations

Journal Article · Mon Aug 20 00:00:00 EDT 2018 · Applied Physics. A, Materials Science and Processing

DOI:https://doi.org/10.1007/s00339-018-2041-3· OSTI ID:1429668

Bielejec, Edward S. ^[1]; Pacheco, Jose L. ^[1]; Perry, Daniel Lee ^[1]; Marinella, Matthew ^[1]; Hughart, David Russell ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

In this study, we demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Finally, ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1429668

Alternate ID(s):: OSTI ID: 22747377

Report Number(s):: SAND--2017-11592J; PII: 2041

Journal Information:: Applied Physics. A, Materials Science and Processing, Journal Name: Applied Physics. A, Materials Science and Processing Journal Issue: 9 Vol. 124; ISSN 0947-8396

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

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