Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

Journal Article · Tue Sep 08 00:00:00 EDT 2015 · ECS Transactions (Online)

DOI:https://doi.org/10.1149/06905.0183ecst· OSTI ID:1237669

Gao, Xujiao ^[1]; Mamaluy, Denis ^[1]; Mickel, Patrick R. ^[1]; Marinella, Matthew ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill out a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1237669
• Alternate ID(s): OSTI ID: 1334585
• Report Number(s): SAND--2015-5520J; 594850
• Journal Information: ECS Transactions (Online), Journal Name: ECS Transactions (Online) Journal Issue: 5 Vol. 69; ISSN 1938-6737
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS