(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
As CMOS technology approaches the end of its scaling, oxide-based memristors have become one of the leading candidates for post-CMOS memory and logic devices. In orderTo facilitate the understanding of physical switching mechanisms and accelerate experimental development of memristors, we have developed a three-dimensional fully-coupled electrical and thermal transport model, which captures all the important processes that drive memristive switching and is applicable for simulating a wide range of memristors. Moreover, the model is applied to simulate the RESET and SET switching in a 3D filamentary TaOx memristor. Extensive simulations show that the switching dynamics of the bipolar device is determined by thermally-activated field-dominant processes: with Joule heating, the raised temperature enables the movement of oxygen vacancies, and the field drift dominates the overall motion of vacancies. Simulated current-voltage hysteresis and device resistance profiles as a function of time and voltage during RESET and SET switching show good agreement with experimental measurement.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1257786
- Report Number(s):
- SAND2016--2238J; 625634
- Journal Information:
- ECS Transactions (Online), Journal Name: ECS Transactions (Online) Journal Issue: 3 Vol. 72; ISSN 1938-6737
- Publisher:
- Electrochemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Analytic band-to-trap tunneling model including band offset for heterojunction devices
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