Synaptic devices based on purely electronic memristors

Journal Article · Mon Jan 04 04:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4939436· OSTI ID:22489261

Pan, Ruobing ^[1]; Li, Jun; Zhuge, Fei; Zhu, Liqiang; Liang, Lingyan; Zhang, Hongliang; Gao, Junhua; Cao, Hongtao; Fu, Bing; Li, Kang ^[1]

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1. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

Memristive devices have been widely employed to emulate biological synaptic behavior. In these cases, the memristive switching generally originates from electrical field induced ion migration or Joule heating induced phase change. In this letter, the Ti/ZnO/Pt structure was found to show memristive switching ascribed to a carrier trapping/detrapping of the trap sites (e.g., oxygen vacancies or zinc interstitials) in ZnO. The carrier trapping/detrapping level can be controllably adjusted by regulating the current compliance level or voltage amplitude. Multi-level conductance states can, therefore, be realized in such memristive device. The spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in this type of synaptic device. Compared with filamentary-type memristive devices, purely electronic memristors have potential to reduce their energy consumption and work more stably and reliably, since no structural distortion occurs.

• OSTI ID: 22489261
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 108; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AMPLITUDES
CARRIERS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ENERGY CONSUMPTION
INTERSTITIALS
IONS
JOULE HEATING
OXYGEN
PLASTICITY
TRAPPING
TRAPS
VACANCIES
ZINC
ZINC OXIDES