Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors
Abstract
In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill out a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1237669
- Report Number(s):
- SAND-2015-5520J
Journal ID: ISSN 1938-6737; 594850
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- ECS Transactions (Online)
- Additional Journal Information:
- Journal Volume: 69; Journal Issue: 5; Journal ID: ISSN 1938-6737
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Gao, Xujiao, Mamaluy, Denis, Mickel, Patrick R., and Marinella, Matthew. Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors. United States: N. p., 2015.
Web. doi:10.1149/06905.0183ecst.
Gao, Xujiao, Mamaluy, Denis, Mickel, Patrick R., & Marinella, Matthew. Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors. United States. https://doi.org/10.1149/06905.0183ecst
Gao, Xujiao, Mamaluy, Denis, Mickel, Patrick R., and Marinella, Matthew. 2015.
"Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors". United States. https://doi.org/10.1149/06905.0183ecst. https://www.osti.gov/servlets/purl/1237669.
@article{osti_1237669,
title = {Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors},
author = {Gao, Xujiao and Mamaluy, Denis and Mickel, Patrick R. and Marinella, Matthew},
abstractNote = {In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill out a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.},
doi = {10.1149/06905.0183ecst},
url = {https://www.osti.gov/biblio/1237669},
journal = {ECS Transactions (Online)},
issn = {1938-6737},
number = 5,
volume = 69,
place = {United States},
year = {Tue Sep 08 00:00:00 EDT 2015},
month = {Tue Sep 08 00:00:00 EDT 2015}
}
Works referencing / citing this record:
Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
journal, February 2016
- Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul
- Advanced Materials, Vol. 28, Issue 14
Analytic band-to-trap tunneling model including band offset for heterojunction devices
journal, February 2019
- Gao, Xujiao; Kerr, Bert; Huang, Andy
- Journal of Applied Physics, Vol. 125, Issue 5
Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
text, January 2016
- Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul
- arXiv