Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations
Journal Article
·
· Applied Physics. A, Materials Science and Processing
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
In this study, we demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Finally, ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- OSTI ID:
- 1429668
- Report Number(s):
- SAND-2017-11592J; PII: 2041; TRN: US1802316
- Journal Information:
- Applied Physics. A, Materials Science and Processing, Vol. 124, Issue 9; ISSN 0947-8396
- Publisher:
- SpringerCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 4 works
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