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Title: Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

Abstract

Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

Inventors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1373705
Patent Number(s):
9,722,122
Application Number:
14/725,592
Assignee:
Alliance for Sustainable Energy, LLC NREL
DOE Contract Number:
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 May 29
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Mascarenhas, Angelo. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices. United States: N. p., 2017. Web.
Mascarenhas, Angelo. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices. United States.
Mascarenhas, Angelo. Tue . "Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices". United States. doi:. https://www.osti.gov/servlets/purl/1373705.
@article{osti_1373705,
title = {Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices},
author = {Mascarenhas, Angelo},
abstractNote = {Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 01 00:00:00 EDT 2017},
month = {Tue Aug 01 00:00:00 EDT 2017}
}

Patent:

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  • Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.
  • In order to provide a semiconductive substrate such as gallium arsenide with an oxide layer, the substrate is positively biased in a plasma reactor in which an oxidizing gas is ionized by radiofrequency excitation while the substrate is heated to an elevated temperature increasing its conductivity. The substrate may be placed for this purpose on a graphite pedestal which is inductively heated from the same radiofrequency source.
  • The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first JPN junction in the GaAs of one bandgap energy on one side of a gallium arsenide substrate, and the deposition of a layer of germanium establishes a second PN junction in Ge of a different bandgap energy on the other side of the GaAs substrate. The two PN junctions are responsive respectively to different wavelength ranges of solar energy to thus enhance the power output capability of a single wafer (substrate) solar cell.more » Utilization of the Group IV element germanium, as contrasted to compound semiconductors, simplifies the process control requirements relative to known prior art compound semiconductor processes, and germanium also provides a good crystal lattice match with gallium arsenide and thereby maximizes process yields. This latter feature also minimizes losses caused by the crystal defects associated with the interface between two semiconductors.« less
  • We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification.more » The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.« less