skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

Patent ·
OSTI ID:1190904

Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
9,076,915
Application Number:
13/877,092
OSTI ID:
1190904
Resource Relation:
Patent File Date: 2011 Mar 08
Country of Publication:
United States
Language:
English

References (42)

Excimer-pumped four level blue-green solid state laser patent August 1981
Fabrication of gallium arsenide-germanium heteroface junction device patent August 1983
Solar cells based on indium phosphide patent May 1986
Method of diffusing plurality of dopants simultaneously from vapor phase into semiconductor substrate patent July 1990
Method of growing p-type group II-VI material patent July 1991
Process of making strain-free, carbon-doped epitaxial layers and products so made patent May 1992
Method for fabricating group III-V heterostructure devices having self-aligned graded contact diffusion regions patent October 1992
GaAs device having a strain-free c-doped layer patent July 1993
Diffusion control of p-n junction location in multilayer heterostructure light emitting devices patent September 1994
Method of making a semiconductor device including carbon as a dopant patent February 1995
Semiconductor arrangement made of compound semiconductor material patent June 1995
Method for making an interconnection structure for integrated circuits patent September 1995
Precursor for semiconductor thin films and method for producing semiconductor thin films patent March 1998
Method of fabricating opto-electronic device patent July 1998
Semiconductor light-emitting device and production method thereof patent April 1999
High-efficiency solar cell and method for fabrication patent August 1999
Quantum-dot cascade laser patent October 1999
Epitaxial wafer for a light-emitting diode and a light-emitting diode patent November 1999
Rigid thin windows for vacuum applications patent December 1999
Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device patent July 2002
Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device patent November 2003
Isoelectronic co-doping patent November 2004
Heterojunction bipolar transistor with a base layer that contains bismuth patent August 2005
Heterojunction bipolar transistor with a base layer that contains bismuth patent March 2006
Heterojunction bipolar transistor with a base layer that contains bismuth patent June 2006
GaP/silicon tandem solar cell with extended temperature range patent December 2006
Bipolar transistors with low parasitic losses patent May 2008
Isoelectronic co-doping patent-application August 2002
Semiconductor device and manufacturing method of the same patent-application March 2004
Semiconductor device patent-application December 2005
High p‐type conductivity in cubic GaN/GaAs(113) A by using Be as the acceptor and O as the codopant journal October 1996
Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs 1 − x Bi x journal February 2011
Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy journal July 1996
Electronic structure and phase stability of GaAs 1 − x N x alloys journal April 1995
Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors journal November 1994
New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy journal November 1998
Molecular doping of gallium nitride journal January 1999
Doping of group III nitrides
  • Ploog, Klaus H.; Brandt, Oliver
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 3, p. 1609-1614 https://doi.org/10.1116/1.581128
journal May 1998
Luminescence due to the Isoelectronic Substitution of Bismuth for Phosphorus in Gallium Phosphide journal July 1966
Ion‐beam synthesis and stability of GaAs nanocrystals in silicon journal April 1996
Role of Cl or I Codoping in Li-Doping Enhancement in ZnSe journal August 1998
Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO journal February 1999

Similar Records

Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices
Patent · Tue Aug 01 00:00:00 EDT 2017 · OSTI ID:1190904
Isoelectronic co-doping
Patent · Tue Nov 09 00:00:00 EST 2004 · OSTI ID:1190904
Scanning tunneling microscopy of point defects and interfaces in compound semiconductors
Journal Article · Tue Aug 01 00:00:00 EDT 1995 · AIP Conference Proceedings · OSTI ID:1190904

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY