Isoelectronic co-doping

Mascarenhas, Angelo

Isoelectronic co-doping

Patent · 08 November 2004

OSTI ID:1175125

Mascarenhas, Angelo

Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-99GO10337

Assignee:: Midwest Research Institute (Kansas City, MO)

Patent Number(s):: 6,815,736

Application Number:: 09/841,691

OSTI ID:: 1175125

Country of Publication:: United States

Language:: English

References (10)

Doping of group III nitrides Ploog, Klaus H.; Brandt, Oliver Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 3, p. 1609-1614 https://doi.org/10.1116/1.581128	journal	May 1998
Molecular doping of gallium nitride Pankove, J. I.; Torvik, J. T.; Qiu, C.-H. Applied Physics Letters, Vol. 74, Issue 3, p. 416-418 https://doi.org/10.1063/1.123046	journal	January 1999
New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy Oe, Kunishige; Okamoto, Hiroshi Japanese Journal of Applied Physics, Vol. 37, Issue Part 2, No. 11A https://doi.org/10.1143/JJAP.37.L1283	journal	November 1998
Ion‐beam synthesis and stability of GaAs nanocrystals in silicon White, C. W.; Budai, J. D.; Zhu, J. G. Applied Physics Letters, Vol. 68, Issue 17, p. 2389-2391 https://doi.org/10.1063/1.116143	journal	April 1996
Isoelectronic Traps Due to Nitrogen in Gallium Phosphide Thomas, D. G.; Hopfield, J. J. Physical Review, Vol. 150, Issue 2, p. 680-689 https://doi.org/10.1103/PhysRev.150.680	journal	October 1966
Ion Beam Annealing of Si Co-Implanted with Ga and As Withrow, S. P.; Holland, O. W.; Pennycook, S. J. MRS Proceedings, Vol. 157 https://doi.org/10.1557/PROC-157-143	journal	January 1989
Role of Cl or I Codoping in Li-Doping Enhancement in ZnSe Yamamoto, Tetsuya; Katayama, Hiroshi Japanese Journal of Applied Physics, Vol. 37, Issue Part 2, No. 8A https://doi.org/10.1143/JJAP.37.L910	journal	August 1998
Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO Yamamoto, Tetsuya; Katayama, Hiroshi Japanese Journal of Applied Physics, Vol. 38, Issue Part 2, No. 2B https://doi.org/10.1143/JJAP.38.L166	journal	February 1999
Luminescence due to the Isoelectronic Substitution of Bismuth for Phosphorus in Gallium Phosphide Trumbore, F. A.; Gershenzon, M.; Thomas, D. G. Applied Physics Letters, Vol. 9, Issue 1 https://doi.org/10.1063/1.1754592	journal	July 1966
High p‐type conductivity in cubic GaN/GaAs(113) A by using Be as the acceptor and O as the codopant Brandt, Oliver; Yang, Hui; Kostial, Helmar Applied Physics Letters, Vol. 69, Issue 18, p. 2707-2709 https://doi.org/10.1063/1.117685	journal	October 1996

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Isoelectronic co-doping

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