Scanning tunneling microscopy of point defects and interfaces in compound semiconductors
- Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
We have used Scanning Tunneling Microscopy (STM) to study dopants, point defects, and interfaces in compound semiconductors after cleavage in Ultra-High-Vacuum. Features due to Si{sub Ga} donors and Zn{sub Ga} acceptors in the STM images of n{sup +} GaAs and p{sup +} GaAs have been identified and characterized on an atomic scale. For the first time, we found the spherical and triangle-shape delocalized Si{sub Ga} donor and Zn{sub Ga} acceptor features, respectively. In heavily doped n{sup +} GaAs, Ga vacancies were observed that produce characteristic dark delocalized spherical features. The Ga vacancies tend to locate close to Si{sub Ga} donors. We imaged an antisite defect in n{sup +} GaAs. High resolution STM spectroscopic images revealed very rich detail of the electronic structures of that site. Isoelectronic In and Ga elements in In{sub 0.2}Ga{sub 0.8} alloy were also identified. This allowed us to investigate the interfaces of GaAs/In{sub 0.2}Ga{sub 0.8}As/GaAs strained layer quantum wells atom-by-atom. Segregation of In at the In{sub 0.2}Ga{sub 0.8}As/GaAs interface and clustering inside In{sub 0.2}Ga{sub 0.8}As were studied.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 279570
- Report Number(s):
- CONF-9409150-; ISSN 0094-243X; TRN: 96:018359
- Journal Information:
- AIP Conference Proceedings, Vol. 342, Issue 1; Conference: CAM `94: Canadian-American-Mexican physics meeting, Cancun (Mexico), 26-30 Sep 1994; Other Information: PBD: Aug 1995
- Country of Publication:
- United States
- Language:
- English
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