Cross-sectional scanning tunneling microscopy of semiconductor vertical-cavity surface-emitting laser structure

Journal Article · Sun May 01 04:00:00 EDT 1994 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.587715· OSTI ID:7045192

Zheng, J F ^[1]; Ogletree, D F ^[2]; Walker, J ^[3]; Salmeron, M ^[2]; Weber, E R ^[1]

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1. Material Science Division, Lawrence Berkeley Laboratory, University of California at Berkeley, Berkeley, California 94720 (United States) Department of Materials Science, University of California at Berkeley, Berkeley, California 94720 (United States)
2. Material Science Division, Lawrence Berkeley Laboratory, University of California at Berkeley, Berkeley, California 94720 (United States)
3. Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley, California 94720 (United States)

Scanning tunneling microscopy (STM) studies of a semiconductor vertical-cavity surface-emitting laser (VCSEL) device viewed in cross section on an atomic scale are reported. The strained layer In[sub 0.2]Ga[sub 0.8]As/GaAs multiple-quantum wells (MQWs) in the laser active region are imaged with atomic resolution. For the first time, the interface roughness of In[sub 0.2]Ga[sub 0.8]As/GaAs MQWs is revealed by imaging spectroscopically different individual indium and gallium atoms. It was found that STM images can directly map the interface electronic structure of Al[sub 0.67]Ga[sub 0.33]As/GaAs multiple layers in the Bragg reflectors of the VCSEL. The images reflect enhanced or reduced interface electron concentration in regions with a spatial extension of [similar to]100 A. The bias effect is also discussed in the imaging of heterostructures.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7045192
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 12:3; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CROSS SECTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMAGES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LASERS
PNICTIDES
ROUGHNESS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STRAINS
SURFACE PROPERTIES