Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy

Journal Article · Mon Apr 11 04:00:00 EDT 1994 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.72.2414· OSTI ID:5112968

Zheng, J F; Walker, J D; Salmeron, M B; Weber, E R ^[1]

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1. Department of Materials Science, University of California at Berkeley, Berkeley, California 94720 (United States) Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States) Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States)

Interface roughness due to segregation and clustering has been studied in atomic detail for the first time, using a cross-sectional scanning tunneling microscope and its spectroscopic ability to distinguish In and Ga atoms in GaAs/In[sub 0.2]Ga[sub 0.8]As/GaAs strained layers. In the In[sub 0.2]Ga[sub 0.8]As layers, InAs is found to cluster preferentially along the growth direction with each cluster containing 2-3 indium atoms. Indium segregation induced an asymmetrical interface broadening. The interface of GaAs grown on In[sub 0.2]Ga[sub 0.8]As is found to be broadened to about 5--10 atomic layers, while that of InGaAs on GaAs is about 2--4 layers broad.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5112968
• Journal Information: Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 72:15; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
JUNCTIONS
MICROSCOPY
PNICTIDES
SEGREGATION
SEMICONDUCTOR JUNCTIONS
STRAINS