Empty state and filled state image of Zn[sub Ga] acceptor in GaAs studied by scanning tunneling microscopy

Journal Article · Mon Apr 04 00:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.111771· OSTI ID:5149753

Zheng, Z F ^[1]; Salmeron, M B ^[2]; Weber, E R ^[1]

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1. Materials Science Division, Lawrence Berkeley Laboratory, and Department of Materials Science, University of California at Berkeley, Berkeley, California 94720 (United States)
2. Materials Science Division, Lawrence Berkeley Laboratory, University of California at Berkeley, Berkeley, California 94720 (United States)

Zn[sub Ga] acceptor atoms in the first to sixth layer below the GaAs (110) cleavage plane have been identified. For the first time, we find that the empty state scanning tunneling microscopy image of a Zn[sub Ga] acceptor is a characteristic equal latitude triangle-shaped feature of [similar to]4 nm width with a (110) mirror plane. The filled state image, however, is a spherical feature of similar size. These unique features can be used as the signature for the identification of Zn[sub Ga] in GaAs.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5149753
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:14; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CLEAVAGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
MICROSTRUCTURE
PNICTIDES
TUNNEL EFFECT
ZINC ADDITIONS
ZINC ALLOYS