Si donors (Si[sub Ga]) in GaAs observed by scanning tunneling microscopy

Journal Article · Sun May 01 00:00:00 EDT 1994 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.587716· OSTI ID:7114698

Zheng, J F ^[1]; Liu, X ^[2]; Weber, E R ^[3]; Ogletree, D F; Salmeron, M ^[4]

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1. Department of Materials Science, University of California at Berkeley (United States) Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
2. Department of Materials Science, University of California at Berkeley, Berkeley, California 94720 (United States)
3. Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
4. Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

We report the direct observation of Si[sub Ga] donors in the top six layers of GaAs(110). Surface Si[sub Ga] has a localized electronic feature due to its dangling bond, while subsurface Si[sub Ga] produces delocalized protrusions in filled and empty state scanning tunneling microscopy images, with a full width at half-maximum of [similar to]25 A and a height from [similar to]0.2 to 2 A, depending on the sample bias and location under the surface. The delocalized features of subsurface Si[sub Ga] can be understood in terms of the perturbation of the local band structure by the Coulomb potential of Si[sub Ga].

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7114698
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 12:3; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL BONDS
COULOMB FIELD
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC FIELDS
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
PNICTIDES
POINT DEFECTS
SILICON ADDITIONS
SILICON ALLOYS
SURFACES
VACANCIES