Scanning tunneling microscopy of Si donors in GaAs

Conference · Thu Jul 01 00:00:00 EDT 1993

OSTI ID:69121

Zheng, J F; Weber, E R ^[1]; Liu, X; Newman, N ^[1]; Ogletree, D F; Salmeron, M B ^[2]

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1. California Univ., Berkeley, CA (United States). Dept. of Materials Science
2. Lawrence Berkeley Lab., CA (United States)

Using scanning tunneling microscopy, we have identified and characterized Si donors (Si{sub Ga}) in GaAs located on the (110) surface and in subsurface layers. Si{sub Ga} on the surface shows localized features with characteristic structures in good agreement with a recent theoretical calculation. Si{sub Ga} in subsurface layers appears as delocalized protrusions superimposed on the background lattice, which are interpreted in terms of the modification of the tunneling due to the tip-induced band bending perturbed by the Si{sub Ga} Coulomb potential.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 69121
• Report Number(s): LBL--34499; CONF-9307124--4; ON: DE95011266
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DOPING
DOPED MATERIALS
GALLIUM ARSENIDES
SCANNING ELECTRON MICROSCOPY
SILICON