U.S. Department of EnergyOffice of Scientific and Technical Information
Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices
Abstract
Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.
- Inventors:
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1373705
- Patent Number(s):
- 9,722,122
- Application Number:
- 14/725,592
- Assignee:
- Alliance for Sustainable Energy, LLC
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 May 29
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY
Citation Formats
Mascarenhas, Angelo. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices. United States: N. p., 2017.
Web.
Mascarenhas, Angelo. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices. United States.
Mascarenhas, Angelo. 2017.
"Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices". United States. https://www.osti.gov/servlets/purl/1373705.
@article{osti_1373705,
title = {Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices},
author = {Mascarenhas, Angelo},
abstractNote = {Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.},
doi = {},
url = {https://www.osti.gov/biblio/1373705},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 01 00:00:00 EDT 2017},
month = {Tue Aug 01 00:00:00 EDT 2017}
}
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