The Si(100)-Sb 2{times}1 and Ge(100) 2{times}1 surfaces: A multi-technique study

Technical Report · Sun Aug 01 04:00:00 EDT 1993

DOI:https://doi.org/10.2172/105652· OSTI ID:105652

Richter, M

The electronic and geometric structures of the clean and Sb terminated Si(100)2{times}1 and Ge(100)-2{times}1 surfaces have been investigated using a multi-technique approach. Low energy electron diffraction (LEED), scanning tunneling microscopy (STM), surface extended X-ray absorption fine structure (SEXAFS) spectroscopy and angle-integrated core-level photoemission electron spectroscopy (PES) were employed to measure the surface symmetry, defect structure, relevant bond lengths, atomic coordination and electronic structure. By employing a multi-technique approach, it is possible to correlate changes in the geometric structure to specific features of the core-level lineshape of the substrate. This allows for the assignment of components of the core-level lineshape to be assigned to specific surface and near-surface atoms.

• Research Organization: Stanford Linear Accelerator Center, Menlo Park, CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00515
• OSTI ID: 105652
• Report Number(s): SLAC--423; SLAC/SSRL--0057; ON: DE95016467
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ANTIMONY ALLOYS
CHEMICAL BONDS
CRYSTAL DEFECTS
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
GERMANIUM ALLOYS
INTERFACES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON ALLOYS
SURFACE PROPERTIES
X-RAY SPECTROSCOPY