Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2 times 1-Sb

Journal Article · Mon Dec 31 00:00:00 EST 1990 · Physical Review Letters; (USA)

DOI:https://doi.org/10.1103/PhysRevLett.65.3417· OSTI ID:6224960

Richter, M; Woicik, J C; Nogami, J; Pianetta, P; Miyano, K E; Baski, A A; Kendelewicz, T; Bouldin, C E; Spicer, W E; Quate, C F; Lindau, I ^[1]

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1. Stanford Synchrotron Radiation Laboratory, Stanford, California 94309 (US) National Institute of Standards and Technology, Gaithersburg, Maryland 20899 Edward L. Ginzton Laboratory, Stanford, California 94305 Stanford Electronics Laboratory, Stanford, California 94305

Surface extended x-ray-absorption fine structure (SEXAFS) has been combined with scanning tunneling microscopy (STM) to determine both the local and long-range bonding properties of the Si(001)2{times}1-Sb interface. Sb {ital L}{sub 3} edge SEXAFS shows that Sb dimers occupy a modified bridge site on the Si(001) surface with a Sb-Sb near-neighbor distance of 2.88{plus minus}0.03 A. Each Sb atom of the dimer is bonded to two Si atoms with a Sb-Si bond length of 2.63{plus minus}0.04 A. STM resolves the dimer structure and provides the long-range periodicity of the surface. Low-energy-electron diffraction of vicinal Si(001) shows that the Sb dimer chains run perpendicular to the original Si dimer chains.

• OSTI ID: 6224960
• Journal Information: Physical Review Letters; (USA), Vol. 65:27; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
BINDING ENERGY
SILICON
ABSORPTION SPECTRA
DIMERS
ELECTRON DIFFRACTION
EXPERIMENTAL DATA
FINE STRUCTURE
INCIDENCE ANGLE
SCANNING ELECTRON MICROSCOPY
TUNNEL EFFECT
X-RAY SPECTRA
COHERENT SCATTERING
DATA
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
ENERGY
INFORMATION
METALS
MICROSCOPY
NUMERICAL DATA
SCATTERING
SEMIMETALS
SPECTRA
360602* - Other Materials- Structure & Phase Studies