Adsorption and interaction of Sb on Si(001) studied by scanning tunneling microscopy and core-level photoemission

Journal Article · Thu Jun 15 00:00:00 EDT 1989 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.39.12758· OSTI ID:6263527

Rich, D H; Leibsle, F M; Samsavar, A; Hirschorn, E S; Miller, T; Chiang, T

Scanning tunneling microscopy (STM) and synchrotron photoemission were used to analyze the Sb/Si(001) interface formation for submonolayer and saturation coverages. The surface-shifted core-level component observed in photoemission for Si(001)-(2/times/1) was suppressed with the adsorption of Sb. Constant-current STM images which were taken for different sample biasconditions show changes in the spatial distribution of the occupied and unoccupied states derived from the Si-dimer dangling bonds upon Sb adsorption.These observations are interpreted in terms of the formation of Sb-Sibonds and the resulting modifications in the surface electronic properties.

• Research Organization: Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801(US); Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801
• DOE Contract Number: AC02-76ER01198
• OSTI ID: 6263527
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 39:17; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ADSORPTION
ANTIMONY
CHEMICAL BONDS
COHERENT SCATTERING
CRYSTAL STRUCTURE
CRYSTALS
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
EMISSION
INTERFACES
METALS
MICROSCOPY
PHOTOEMISSION
SCATTERING
SECONDARY EMISSION
SEMIMETALS
SILICON
SORPTION
SUBSTRATES
SURFACE PROPERTIES