Degenerate doping and conduction-band properties of Si studied by synchrotron photoemission of Sb/Si(001)

Journal Article · Tue Aug 15 00:00:00 EDT 1989 · Physical Review (Section) B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.40.3469· OSTI ID:5484705

Rich, D H; Samsavar, A; Miller, T; Leibsle, F M; Chiang, T ^[1]

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1. Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801 (US)

Photoemission of the Sb-covered Si(001) surface showed that the Fermi-level position crosses the conduction-band minimum of Si for Sb coverages approaching a 1-monolayer saturation limit. Momentum-resolved photoemission of the Sb-saturated Si(001) surface revealed the existence of an occupied initial state located near the conduction-band minimum. The metallic character of the surface is shown to be indicative of degenerate doping in the near-surface region.

• DOE Contract Number: AC02-76ER01198
• OSTI ID: 5484705
• Journal Information: Physical Review (Section) B: Condensed Matter; (USA), Journal Name: Physical Review (Section) B: Condensed Matter; (USA) Vol. 40:5; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANTIMONY
BREMSSTRAHLUNG
COATINGS
CRYSTAL DOPING
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
ELEMENTS
EMISSION
ENERGY LEVELS
FERMI LEVEL
METALS
PHOTOEMISSION
RADIATIONS
SECONDARY EMISSION
SEMIMETALS
SILICON
SURFACE PROPERTIES
SYNCHROTRON RADIATION