Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Synchrotron photoemission studies of the Sb-passivated Si surfaces: Degenerate doping and bulk band dispersions

Journal Article · · Physical Review (Section) B: Condensed Matter; (USA)
; ; ; ;  [1]
  1. Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801 (US) Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801

Synchrotron photoemission of the Sb-covered Si(001), Si(111), and Si(110) surfaces revealed that the Fermi-level position crosses the conduction-band minimum (CBM) of Si for Sb coverages approaching a one-monolayer saturation limit. Momentum-resolved photoemission of the Sb-saturated Si(001) and Si(110) surfaces showed the existence of an occupied initial state located near the CBM. The photoemission intensity of the state has been examined as a function of photon energy with constant initial-state difference spectroscopy which showed various resonances occurring due to transitions to different final states from the CBM. The metallic character of the surface is shown to be due to degenerate doping in the near-surface region. Core-level spectroscopy of Sb/Si(111) and Sb/Si(001) revealed that the Si atoms in the near-surface region are converted to exhibit a bulklike arrangement after Sb coverage. The Sb saturation of Si(111) and Si(001) was found to allow the measurement of the bulk band-dispersion relations along the high-symmetry {Gamma}-{Lambda}-{ital L} and {Gamma}-{Delta}-{ital X} directions over a wide photon-energy range (37--153 eV). Strain-reduction mechanisms in the near-surface region are discussed. The measured CBM-state resonances and the Si(001) bulk band transitions indicate that the effective mass of the free-electron-like final band changes for varying photon energies.

DOE Contract Number:
AC02-76ER01198
OSTI ID:
7268500
Journal Information:
Physical Review (Section) B: Condensed Matter; (USA), Journal Name: Physical Review (Section) B: Condensed Matter; (USA) Vol. 40:17; ISSN 0163-1829; ISSN PRBMD
Country of Publication:
United States
Language:
English

Similar Records

Degenerate doping and conduction-band properties of Si studied by synchrotron photoemission of Sb/Si(001)
Journal Article · Tue Aug 15 00:00:00 EDT 1989 · Physical Review (Section) B: Condensed Matter; (USA) · OSTI ID:5484705

Adsorption and interaction of Sb on Si(001) studied by scanning tunneling microscopy and core-level photoemission
Journal Article · Thu Jun 15 00:00:00 EDT 1989 · Phys. Rev. B: Condens. Matter; (United States) · OSTI ID:6263527

Preliminary soft x-ray studies of [beta]-SiC
Journal Article · Fri Jul 01 00:00:00 EDT 1994 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) · OSTI ID:7028916