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Preliminary soft x-ray studies of [beta]-SiC

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
DOI:https://doi.org/10.1116/1.579288· OSTI ID:7028916
 [1];  [2]; ;  [3];  [2]
  1. National Synchrotron Light Source Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  2. Physics Department, Tulane University, New Orleans, Louisiana 70118 (United States)
  3. Physics Department, University of Tennessee, Knoxville, Tennessee 37996 (United States)
We have looked at [beta]-SiC with soft x-ray emission and photoemission spectroscopy. From the Si [ital L][sub 23] and C [ital K] emissions, the Si [ital s]+[ital d]-like and C [ital p] partial density of states in the bulk valence band are identified and compared with valence band photoemission. In addition to bulk electronic structural features, photoemission from a (3[times]2) Si-rich surface shows two surface-derived valence features at [similar to][minus]2.6 and [similar to][minus]1.6 eV relative to the Fermi level. The intensities of these valence features vary as those of surface Si 2[ital p] core level components shifted by [minus]0.5 and [minus]1.4 eV from the bulklike SiC Si 2[ital p] core level. We have also used the Si [ital L][sub 23] absorption edge as a probe of the unfilled states near the conduction band minimum.
DOE Contract Number:
AC02-76CH00016
OSTI ID:
7028916
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 12:4; ISSN 0734-2101; ISSN JVTAD6
Country of Publication:
United States
Language:
English

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