Characterization of reconstructed SiC(100) surfaces using soft-x-ray photoemission spectroscopy

Journal Article · Mon Jan 23 04:00:00 EST 1995 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.114061· OSTI ID:6880352

Bermudez, V M; Long, J P ^[1]

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1. Naval Research Laboratory, Washington, DC 20375-5000 (United States)

The surface quality of [beta]SiC films grown on Si(100) by chemical vapor deposition has been assessed through synchrotron photoemission measurements of the valence band and of the linewidths and surface-induced structure in Si 2[ital p] core-level spectra. For these [ital n]-type samples, band bending is small on the [ital c](2[times]2) and (3[times]2) surfaces but larger on the (2[times]1), which also exhibits an increased Si 2[ital p] linewidth and evidence of elemental Si patches. All three reconstructions show emission from gap states extending from the valence band maximum to the Fermi level.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6880352
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 66:4; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
665100 -- Nuclear Techniques in Condensed Matter Physics -- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BREMSSTRAHLUNG
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
DEPOSITION
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
EMISSION
MORPHOLOGY
PHOTOEMISSION
RADIATIONS
SECONDARY EMISSION
SILICON CARBIDES
SILICON COMPOUNDS
SURFACE COATING
SURFACE PROPERTIES
SYNCHROTRON RADIATION