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Soft x-ray photoemission characterization of the H sub 2 S exposed surface of p -InP

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.350415· OSTI ID:7039296
 [1];  [2];  [3]
  1. National Renewable Energy Laboratories, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
  2. Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, Wisconsin 53589 (United States)
  3. Argonne National Laboratory/Advanced Photon Source, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)
Synchrotron radiation soft x-ray photoemission spectroscopy was used to characterize the surface chemistry of {ital p}-InP before and after exposure to H{sub 2}S gas at ambient temperature. The effect of the H{sub 2}S dosing was determined by {ital in} {ital situ} photoemission measurements which were acquired after each gas exposure in order to observe changes in the valence band electronic structure as well as changes in the In 4{ital d}, P 2{ital p}, and S2{ital p} core lines. The results were used to correlate the surface chemistry to the electronic properties. These measurements indicate that the H{sub 2}S exposure type converts the {ital p}-type InP surface to an {ital n}-type surface and that the magnitude of the band bending is 0.6 eV resulting in a homojunction interface.
DOE Contract Number:
AC02-83CH10093
OSTI ID:
7039296
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 71:12; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English