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Surface type conversion of InP by H[sub 2]S plasma exposure: A photoemission investigation

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
DOI:https://doi.org/10.1116/1.578807· OSTI ID:6300052
 [1];  [2];  [3]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  2. Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, Wisconsin 53589 (United States)
  3. Argonne National Laboratory/Advanced Photon Source, Argonne, Illinois 60439 (United States)
The surface chemistry and the electronic structure of InP(100) before and after exposure to a H[sub 2]S plasma was investigated by synchrotron radiation soft x-ray photoemission spectroscopy. The low power H[sub 2]S plasma was generated with a commercial electron cyclotron resonance plasma source using H[sub 2]S with the plasma exposure being performed as a function of incident angle and temperature. Plasma species were identified with optical emission spectroscopy. [ital In] [ital situ] photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence band electronic structure as well as changes in the In 4[ital d], P 2[ital p], and S 2[ital p] core lines. The results were correlated in order to relate the plasma species and characteristics to changes in surface chemistry and electronic properties. These measurements indicate that the H[sub 2]S plasma exposure type converts the [ital p]-type InP(100) surface to an [ital n]-type surface resulting in a shallow homojunction interface.
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6300052
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 11:4; ISSN 0734-2101; ISSN JVTAD6
Country of Publication:
United States
Language:
English