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Photoemission characterization of the H sub 2 plasma-etched surface of CdS

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.351894· OSTI ID:7048656
 [1];  [2];  [3]
  1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
  2. Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, Wisconsin 53589 (United States)
  3. Argonne National Laboratory/Advanced Photon Source, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)
The effects of H{sub 2} plasma exposure of CdS as a function of substrate temperature was studied by synchrotron radiation soft x-ray photoemission spectroscopy and optical emission spectroscopy. The low-power H{sub 2} plasma was generated with a commercial electron cyclotron resonance plasma source using pure H{sub 2} with the plasma exposure being performed at ambient temperatures of 100 and 200 {degree}C. Plasma species were identified with optical emission spectroscopy. {ital In} {ital situ} photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence-band electronic structure as well as changes in the Cd 4{ital d} and S 2{ital p} core lines. The results were correlated in order to relate the plasma species and characteristics to changes in surface chemistry and electronic structure. These measurements indicate that the H{sub 2} plasma exposure type converts the CdS surface to an {ital n}-type surface and that the magnitude of the band bending is dependent on substrate temperature during plasma exposure.
DOE Contract Number:
AC02-83CH10093
OSTI ID:
7048656
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 72:12; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English

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