Photoemission characterization of the H sub 2 plasma etched surface of InP

Journal Article · Fri Nov 15 04:00:00 EST 1991 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.350176· OSTI ID:5191908

Nelson, A J ^[1]; Frigo, S; Mancini, D; Rosenberg, R ^[2]

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1. Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado (USA)
2. Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, Wisconsin (USA)

Synchrotron radiation soft x-ray photoemission spectroscopy was used to characterize the surface chemistry of InP before and after exposure to a H{sub 2} plasma. The low-power H{sub 2} plasma was generated with a commercial electron cyclotron resonance plasma source using a mixture of H{sub 2} and Ar with the plasma exposure being performed at ambient temperature. Plasma species were identified with quadrupole based mass spectrometry and optical emission spectroscopy. Photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence-band electronic structure as well as changes in the In 4{ital d} and P 2{ital p} core lines. The results were correlated in order to relate the plasma species and characteristics to changes in surface chemistry.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5191908
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 70:10; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
ALLOYS
BEAM INJECTION
CATIONS
CHARGED PARTICLES
CHEMICAL REACTIONS
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
EMISSION
ETCHING
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
HYDROGEN IONS 2 PLUS
HYDROGEN IONS 3 PLUS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IONIZING RADIATIONS
IONS
MATERIALS
MOLECULAR IONS
P-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOEMISSION
PLASMA BEAM INJECTION
PNICTIDES
RADIATIONS
REDUCTION
SECONDARY EMISSION
SEMICONDUCTOR MATERIALS
SOFT X RADIATION
SURFACE FINISHING
SURFACE PROPERTIES
X RADIATION
ZINC ADDITIONS
ZINC ALLOYS