Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Chemistry and electronic structure of the H[sub 2] plasma passivated surface of CdTe

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.356376· OSTI ID:5437706
 [1];  [2];  [3]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  2. Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, Wisconsin 53589 (United States)
  3. Argonne National Laboratory/Advanced Photon Source, Argonne, Illinois 60439 (United States)
The effects of low energy H[sub 2] plasma exposure on the surface defect chemistry and the electronic structure of CdTe were studied by synchrotron radiation soft x-ray photoemission spectroscopy and optical emission spectroscopy as a function of substrate temperature. The low energy H[sub 2] plasma was generated with a commercial electron cyclotron resonance plasma source using pure H[sub 2] with the plasma exposure being performed at ambient temperature, 100 [degree]C, and 200 [degree]C. Plasma species were identified with optical emission spectroscopy. [ital In] [ital situ] photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence band electronic structure as well as changes in the Cd 4[ital d] and Te 4[ital d] core lines. The results were correlated in order to relate the plasma species and characteristics to changes in surface defect chemistry and electronic structure. These measurements indicate that the H[sub 2] plasma exposure type converts the CdTe(100) surface from [ital p]- to [ital n]-type and passivates defect states.
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5437706
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 75:3; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

Similar Records

Photoemission characterization of the H sub 2 plasma-etched surface of CdS
Journal Article · Mon Dec 14 23:00:00 EST 1992 · Journal of Applied Physics; (United States) · OSTI ID:7048656

Surface type conversion of InP by H[sub 2]S plasma exposure: A photoemission investigation
Journal Article · Thu Jul 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) · OSTI ID:6300052

Photoemission characterization of the H sub 2 plasma etched surface of InP
Journal Article · Thu Nov 14 23:00:00 EST 1991 · Journal of Applied Physics; (United States) · OSTI ID:5191908