Preliminary soft x-ray studies of beta-SiC

Conference · Wed Jun 01 04:00:00 EDT 1994

OSTI ID:10157063

Shek, M L ^[1]; Miyano, K E; Ederer, D L ^[2]; Dong, Q Y; Callcott, T A ^[3]

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1. Brookhaven National Lab., Upton, NY (United States)
2. Tulane Univ., New Orleans, LA (United States). Dept. of Physics
3. Tennessee Univ., Knoxville, TN (United States). Dept. of Physics

We have looked at beta-SiC with soft x-ray emission and photoemission spectroscopy. From the Si L{sub 23} and C K emissions, the Si s+d-like and C p partial density of states in the bulk valence band are identified, and compared with valence band photoemission. In addition to bulk electronic structural features, photoemission from a (3 {times} 2) Si-rich surface shows two surface-derived valence features at {approximately}{minus}2.6 and {approximately}{minus}1.6 eV relative to the Fermi level. The intensities of these valence features vary as those of surface Si 2p core level components shifted by {minus}0.5 eV and {minus}1.4 eV from the bulk-like SiC Si 2p core level. We have also used the Si L{sub 23} absorption edge as a probe of the unfilled states near the conduction, band minimum.

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 10157063
• Report Number(s): BNL--60381; CONF-9311104--21; ON: DE94013023
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204
665100
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL VAPOR DEPOSITION
ELECTRONIC STRUCTURE
NUCLEAR TECHNIQUES IN CONDENSED MATTER PHYSICS
PHOTOEMISSION
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
X-RAY EMISSION ANALYSIS
X-RAY SPECTROSCOPY