Photoemission study of Cr on a -Si:H
- Department of Physics, Iowa StateUniversity, Ames IA (USA) Ames Laboratory U.S. Department of Energy,Iowa State University, Ames, IA (USA)
We report a synchrotron-radiation photoemission study of Cr evaporated on rf-sputtered {ital a}-Si:H at room temperature. The evolution of the interface qualitatively follows that on {ital c}-Si, despite differences in the valence-band emission. The interface begins with an inactive layer ({le}1 A) of Cr, followed by an intermixed Cr/{ital a}-Si:H layer ({le}12 A). With further Cr deposition, bulklike Cr metal begins to develop on top of these. Some features exhibited by the Cr/{ital a}-Si:H interface are specific to {ital a}-Si:H surfaces. For instance, Cr adatoms are found around the dangling-bond neighborhood at coverages below 1 A, avoiding Si--H bonds. The oxygen residual is responsible for the presence of a 6-eV peak in the valence band as well as a chemical shift in the Si 2{ital p} core levels. However, it is the intermixed Cr/{ital a}-Si species occurring above 2 A of Cr deposition that provoke the presence of the structures, even though at low coverages, the oxygen residue does not show any effect on the surface-electronic structure of the {ital a}-Si:H film. At high coverage, a slight trace of silicon atoms is still detectable.
- DOE Contract Number:
- W-7405-ENG-82
- OSTI ID:
- 6224541
- Journal Information:
- Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 42:15; ISSN 0163-1829; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
AMORPHOUS STATE
CHEMICAL BONDS
CHROMIUM
ELEMENTS
EMISSION
FILMS
HYDRIDES
HYDROGEN COMPOUNDS
METALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOEMISSION
SECONDARY EMISSION
SILANES
SILICON COMPOUNDS
SUBSTOICHIOMETRY
THIN FILMS
TRANSITION ELEMENTS