Hydrogen density of states and defects densities in a-Si:H
Book
·
OSTI ID:527680
- Philips Research Labs., Redhill, Surrey (United Kingdom)
- Cambridge Univ. (United Kingdom). Engineering Dept.
The properties of hydrogenated amorphous silicon (a-Si:H) and its devices depend fundamentally on the density of states (DOS) in the gap due to dangling bonds. It is generally believed that the density of dangling bonds is controlled by a chemical equilibrium with the weak Si-Si bonds which form the localized valence band tail states. Further details are given of a unified model of the hydrogen density of states and defect pool of a-Si:H. The model is compared to other defect models and extended to describe a-Si alloys and the creation of valence band tail states during growth.
- OSTI ID:
- 527680
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
Similar Records
Metastable defects in a-Si:H from bond-length disorder
Recombination in a-Si:H: Results from the standard and defect pool models
Photocreated defects and light-induced ESR in a-Si:H and related alloy films
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:527697
Recombination in a-Si:H: Results from the standard and defect pool models
Book
·
Fri Dec 30 23:00:00 EST 1994
·
OSTI ID:208134
Photocreated defects and light-induced ESR in a-Si:H and related alloy films
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:527686