Recombination in a-Si:H: Results from the standard and defect pool models
- Technical Univ. of Lisbon, Lisboa (Portugal)
Results from numerical calculations of the recombination kinetics in a-Si:H involving either the standard or the defect pool models, including band tail states, are reported. Fermi level, light intensity and temperature dependences of {mu}{tau} products are investigated. Major features of experimentally observed majority carrier behavior can be described on the basis of the standard model. Photo-quenching of both ({mu}{tau}){sub e} and ({mu}{tau}){sub h} for Fermi level positions around mid-gap can be reproduced on the basis of the defect pool model. Photo-enhancement and thermal quenching of ({mu}{tau}){sub e} are associated with a capture cross section of the band tails smaller than the capture cross sections of the dangling-bonds.
- OSTI ID:
- 208134
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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