Photoconductivity and light-induced change in a-italic-Si:H

Journal Article · Fri Aug 15 04:00:00 EDT 1986 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.34.2475· OSTI ID:5392725

McMahon, T J; Xi, J P

Capture-rate constants for the trapping of free carriers into different gap-state species are determined by calculating dc photoconductivity at intermediate generation rates versus the inverse temperature and fitting to data measured on undoped a-italic-Si:H in the as-grown and light-soaked states. In the as-grown state, recombination is dominated by high-capture-rate centers near the Fermi level (dangling bonds) at and above 300 K. To explain the second peak and rapid decrease in photoconductivity at lower temperatures, an energy-dependent capture rate must be invoked on the smaller-cross-section band-tail states, indicating a multiphonon energy-loss process for the trapping of free charge. After 90 h of exposure to 100 mW/cm/sup 2/ of light, the decrease found in photoconductivity is explained only by increases in both dangling-bond recombination at and above room temperature a-italicn-italicd-italic tail-state recombination at lower temperatures. The increased recombination at lower temperatures after light soaking is attributed to additional donor states located 0.23 eV above the valence-band edge.

• Research Organization: Solar Energy Research Institute, Golden, Colorado 80401
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5392725
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 34:4; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
CHARGE CARRIERS
DATA
ELECTRIC CONDUCTIVITY
ELECTRIC DISCHARGES
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FILMS
GLOW DISCHARGES
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
LOW TEMPERATURE
MEDIUM TEMPERATURE
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
RECOMBINATION
SILANES
SILICON COMPOUNDS
TEMPERATURE DEPENDENCE
TRAPPING