Investigation of gap states in a-Si:H using dual beam photoconductivity and photoluminescence
Conference
·
OSTI ID:5994969
A chopped bam of infrared (ir) photons can be used to modulate both the photoconductivity (PC) and the photoluminescence (PL) generated in a-Si:H by a steady primary beam of visible light. The dominant effects can be explained by the re-excitation of trapped charges into the bands (which causes an immediate enhancement of photocurrent and luminescence) followed by a slow redistribution of charge among the gap states (resulting in an increase in the recombination rate, and quenching of PL and PC).
- Research Organization:
- Brookhaven National Lab., Upton, NY (USA)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 5994969
- Report Number(s):
- BNL-35564; CONF-8411133-1; ON: DE85005137
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
AMORPHOUS STATE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ENERGY GAP
HYDRIDES
HYDROGEN COMPOUNDS
INFRARED RADIATION
LUMINESCENCE
MODULATION
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
RADIATIONS
RECOMBINATION
SILANES
SILICON COMPOUNDS
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
AMORPHOUS STATE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ENERGY GAP
HYDRIDES
HYDROGEN COMPOUNDS
INFRARED RADIATION
LUMINESCENCE
MODULATION
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
RADIATIONS
RECOMBINATION
SILANES
SILICON COMPOUNDS