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Investigation of gap states in a-Si:H using dual beam photoconductivity and photoluminescence

Conference ·
OSTI ID:5994969
A chopped bam of infrared (ir) photons can be used to modulate both the photoconductivity (PC) and the photoluminescence (PL) generated in a-Si:H by a steady primary beam of visible light. The dominant effects can be explained by the re-excitation of trapped charges into the bands (which causes an immediate enhancement of photocurrent and luminescence) followed by a slow redistribution of charge among the gap states (resulting in an increase in the recombination rate, and quenching of PL and PC).
Research Organization:
Brookhaven National Lab., Upton, NY (USA)
DOE Contract Number:
AC02-76CH00016
OSTI ID:
5994969
Report Number(s):
BNL-35564; CONF-8411133-1; ON: DE85005137
Country of Publication:
United States
Language:
English