Infrared quenching of photoconductivity and the study of gap states in hydrogenated amorphous silicon alloys
Journal Article
·
· J. Appl. Phys.; (United States)
Infrared quenching of photoconductivity has been investigated for plasma-deposited a-Si:H alloys. The temperature and spectral dependences of the quenching are consistent with a two-level model of competing recombination centers. The infrared quenching spectrum shows that this effect occurs for photons having energies in the range 0.4 eV
- Research Organization:
- Department of Energy and Environment, Brookhaven National Laboratory, Upton, New York 11973
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 5458222
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:4; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ALLOYS
AMORPHOUS STATE
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY GAP
ENERGY LEVELS
FERMI LEVEL
FREQUENCY DEPENDENCE
HOLES
HYDROGEN
INFRARED RADIATION
MATHEMATICAL MODELS
NONMETALS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PLASMA
RADIATION EFFECTS
RADIATIONS
RECOMBINATION
SCINTILLATION QUENCHING
SILICON ALLOYS
SPECTRA
TEMPERATURE DEPENDENCE
360104* -- Metals & Alloys-- Physical Properties
ALLOYS
AMORPHOUS STATE
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY GAP
ENERGY LEVELS
FERMI LEVEL
FREQUENCY DEPENDENCE
HOLES
HYDROGEN
INFRARED RADIATION
MATHEMATICAL MODELS
NONMETALS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PLASMA
RADIATION EFFECTS
RADIATIONS
RECOMBINATION
SCINTILLATION QUENCHING
SILICON ALLOYS
SPECTRA
TEMPERATURE DEPENDENCE