Infrared modulation of photoluminescence in glow discharge amorphous silicon

Conference · Sun Jan 01 04:00:00 EST 1984

OSTI ID:6826146

Varmazis, C; Hirsch, M D; Vanier, P E

Dual beam photoluminescence (PL) from a-Si:H was measured at various temperatures by exciting the sample with a modulated infrared (IR) beam in addition to a steady beam of visible light. Varying the modulation frequency revealed that the IR caused a transient enhancement of the PL, followed by a slow quenching effect. The IR excitation spectrum showed quenching by photons with energies between 0.45 and 1.1 eV, similar to the IR quenching of photoconductivity. The fast process enhanced the emission peak equally at all energies, while the slow process quenched only the high energy side of the peak. These results can be explained by the re-excitation of holes from safe traps by the IR, followed by recombination at dangling bonds.

• Research Organization: Brookhaven National Lab., Upton, NY (USA)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6826146
• Report Number(s): BNL-35144; CONF-840881-1; ON: DE84016993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
ELECTROMAGNETIC RADIATION
ELEMENTS
HOLES
HYDRIDES
HYDROGEN COMPOUNDS
INFRARED RADIATION
LUMINESCENCE
MODULATION
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOLUMINESCENCE
RADIATIONS
RECOMBINATION
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
TRAPS