Infrared modulation of photoluminescence in glow discharge amorphous silicon

Conference · Mon Oct 01 04:00:00 EDT 1984 · AIP Conf. Proc.; (United States)

OSTI ID:5625031

Varmazis, C; Hirsch, M D; Vanier, P E

Dual beam photoluminescence (PL) from a-Si:H was measured at various temperatures by exciting the sample with a modulated infrared (IR) beam in addition to a steady beam of visible light. Varying the modulation frequency revealed that the IR caused a transient enhancement of the PL, followed by a slow quenching effect. The IR excitation spectrum showed quenching by photons with energies between 0.45 and 1.1 eV, similar to the IR quenching of photoconductivity. The fast process enhanced the emission peak equally at all energies, while the slow process quenched only the high energy side of the peak. These results can be explained by the re-excitation of holes from ''safe traps'' by the IR, followed by recombination at dangling bonds.

• Research Organization: Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5625031
• Report Number(s): CONF-840881-
• Conference Information: Journal Name: AIP Conf. Proc.; (United States) Journal Volume: 120:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
DATA
ELECTROMAGNETIC RADIATION
ENERGY-LEVEL TRANSITIONS
EXCITATION
EXPERIMENTAL DATA
FILMS
HOLES
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
INFRARED RADIATION
LOW TEMPERATURE
LUMINESCENCE
MODULATION
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOLUMINESCENCE
QUENCHING
RADIATIONS
RECOMBINATION
SILANES
SILICON COMPOUNDS
TEMPERATURE DEPENDENCE
TRANSIENTS
ULTRALOW TEMPERATURE
VERY LOW TEMPERATURE
VISIBLE RADIATION