Light-soaking effects on photoconductivity in a-Si:H thin films
Conference
·
OSTI ID:20085469
Metastable defects have been created by light exposure in thin films of a-Si:H. The samples have been characterized by Photothermal Deflection Spectroscopy, Electron Spin Resonance, dark- and photo-conductivity. The experimental results are consistent with numerical calculations with a recombination model involving band tails and one class of correlated dangling-bond states. The effects of light-soaking on the light intensity and defect density dependences of photoconductivity are reproduced by the calculations. The model allows to explain the experimental trends by changes in the electronic occupation of the gap states produced by light-induced defects.
- Research Organization:
- Technical Univ. of Lisbon (PT)
- Sponsoring Organization:
- Junta Nacional de Investigacao Cientifica
- OSTI ID:
- 20085469
- Country of Publication:
- United States
- Language:
- English
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