Light induced effects in a-Si:H films alloyed with sulfur
Light-induced effects are studied in hydrogenated amorphous silicon-sulfur alloys (a-SiS{sub x}:H) and compared to those that exist in a-Si:H. The A-SiS{sub x}:H films were grown by decomposition of pre-mixtures of SiH{sub 4} and H{sub 2}S. The light-induced effects were monitored using electrical (dark conductivity and photoconductivity, including the constant photocurrent method [CPM]) and optical (photoluminescence) measurements and electron spin resonance. It is found that sulfur alloying results in a significant reduction in the degradation in the dark- and photo-conductivity. For an a-SiS{sub x}:H film grown with a gas mixture of H{sub 2}S/SiH{sub 4} = 0.02, there is an increase of over an order of magnitude in the dark conductivity and a small decrease in the photoconductivity after 50 hours of light soaking. The subgap deep defect density as measured by CPM increases with illumination time, following a stretched exponential to saturation. The saturated defect density is an order of magnitude higher than that observed in the annealed state.
- Research Organization:
- Univ. of Utah, Salt Lake City, UT (US)
- Sponsoring Organization:
- National Renewable Energy Laboratory
- OSTI ID:
- 20085467
- Country of Publication:
- United States
- Language:
- English
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